Induced charge fluctuations in hemispherical semiconductor detectors

Charge transport in arrays of semiconductor gamma-ray detectors.

We analyze the effects of electrode size on performance of arrays of semiconductor gamma-ray detectors, especially when there is significant charge trapping. With large electrodes, motions of holes and electrons are of equal importance, but when the positive electrode is segmented into an array of small elements the contributions of holes to the output, and hence the effects of hole trapping, a...

Semiconductor Detectors in Radiation Medicine:

Semiconductor radiation detectors play an important role in radiation instrumentation. They have many advantages due to their small size, outstanding energy resolution in nuclear spectroscopy, easy pixilation for high spatial resolution and ability of integration with readout electronics. Advancement in microelectronic industry made silicon one of the most popular material for radiation detecto...

Semiconductor Detectors - an Introduction

Currents Induced by Injected Charge in Junction Detectors

The problem of drifting charge-induced currents is considered in order to predict the pulsed operational characteristics in photo-and particle-detectors with a junction controlled active area. The direct analysis of the field changes induced by drifting charge in the abrupt junction devices with a plane-parallel geometry of finite area electrodes is presented. The problem is solved using the on...

Microstructured semiconductor neutron detectors

Perforated semiconductor neutron detectors are compact diode detectors that operate at low power and can be fashioned to have high thermal neutron detection efficiency. Fabricated from high-purity Si wafers, the perforations are etched into the diode surface with ICP-RIE and backfilled with LiF neutron reactive material. The intrinsic thermal neutron detection efficiency depends upon many facto...